The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The DC equation and source drain capacitance formula of the models are given and the application range of three circuit simulation programs is analysed.
在给出多种模型DC方程和源漏电容公式的同时，对三种电路模拟程序的应用范围进行了分析。
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.
器件采用了新的“积木式”台面结构，减小了栅-漏反馈电容。
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